| Mfg Part Number: 8210-1122 | Alternate P/N: 82101122 | NSN : 5961-00-110-0921 |
| NIIN : 001100921 | CAGE Code : 07688 | Manufacturer: Joint Electron Device Engineering |
| Item Name : Transistor | FSC : 5961 Semiconductor Devices and Associated Hardware |
Thank you for choosing NSN Catalogue for all your operational needs. You have reached our NSN RFQ Page which features our in-demand NSN 5961-00-110-0921 part 8210-1122 with Transistor manufactured by MFG Joint Electron Device Engineering. Some of these items include part number 8210-1122, and various others, all of which have been subjected to a number of quality assurance measures, tests, verifications, and assessments. At NSN Catalogue, we make it our priority to only source from top global manufacturers that we trust, assuaging the worry of receiving quality items from us.
The NSN 5961-00-110-0921 products 8210-1122 that we feature by MFG Joint Electron Device Engineering are paired alongside CAGE Code 07688. NSN Catalogue utilizes CAGE Codes, allowing our customers to narrow down our vast listings by using our optimized search engine and filters. If you are familiar with the CAGE Codes associated with the particular NSN parts and components you wish to purchase, we invite you to use them. If you have more information regarding the NSN items you wish to purchase, please provide such details in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in just 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-110-0921 Item Description: Transistor | 5961 | 001100921 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 8210-1122 | 2 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.240 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 MILLIAMPERES SOURCE CUTOFF CURRENT BLANK |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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