Quote Now for 64 00009 001 NSN Part by General Dynamics Ots Inc with NSN 5962-01-135-5397

Mfg Part Number: 64 00009 001	Alternate P/N: 6400009001	NSN : 5962-01-135-5397
NIIN : 011355397	CAGE Code : 21562	Manufacturer: General Dynamics Ots Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Thank you for choosing NSN Catalogue for all your operational needs. You have reached our NSN RFQ Page which features our in-demand NSN 5962-01-135-5397 part 64 00009 001 with Microcircuit Memory manufactured by MFG General Dynamics Ots Inc. Some of these items include part number 64 00009 001, and various others, all of which have been subjected to a number of quality assurance measures, tests, verifications, and assessments. At NSN Catalogue, we make it our priority to only source from top global manufacturers that we trust, assuaging the worry of receiving quality items from us.

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The NSN 5962-01-135-5397 products 64 00009 001 that we feature by MFG General Dynamics Ots Inc are paired alongside CAGE Code 21562. NSN Catalogue utilizes CAGE Codes, allowing our customers to narrow down our vast listings by using our optimized search engine and filters. If you are familiar with the CAGE Codes associated with the particular NSN parts and components you wish to purchase, we invite you to use them. If you have more information regarding the NSN items you wish to purchase, please provide such details in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in just 15 minutes or less.

Characteristics Data of NSN 5962-01-135-5397, 5962011355397

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 180 INCHES MINIMUM AND 1 220 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 560 INCHES MINIMUM AND 0 600 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 080 INCHES MINIMUM AND 0 130 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 070 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATION4920-01-054-8585 81755
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN8 INPUT
MEMORY	CRHL	BIT QUANTITY2048
MEMORY	CSWJ	WORD QUANTITY256
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC0 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT16340-64-00009 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT