Quote Now for 1280PALC22V10-2 NSN Part by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-371-1421

Mfg Part Number: 1280PALC22V10-2	Alternate P/N: 1280PALC22V102	NSN : 5962-01-371-1421
NIIN : 013711421	CAGE Code : 72314	Manufacturer: Bae Systems Information And Electronic Systems Integration I
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Thank you for choosing NSN Catalogue for all your operational needs. You have reached our NSN RFQ Page which features our in-demand NSN 5962-01-371-1421 part 1280PALC22V10-2 with Microcircuit Memory manufactured by MFG Bae Systems Information And Electronic Systems Integration I. Some of these items include part number 1280PALC22V10-2, and various others, all of which have been subjected to a number of quality assurance measures, tests, verifications, and assessments. At NSN Catalogue, we make it our priority to only source from top global manufacturers that we trust, assuaging the worry of receiving quality items from us.

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The NSN 5962-01-371-1421 products 1280PALC22V10-2 that we feature by MFG Bae Systems Information And Electronic Systems Integration I are paired alongside CAGE Code 72314. NSN Catalogue utilizes CAGE Codes, allowing our customers to narrow down our vast listings by using our optimized search engine and filters. If you are familiar with the CAGE Codes associated with the particular NSN parts and components you wish to purchase, we invite you to use them. If you have more information regarding the NSN items you wish to purchase, please provide such details in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in just 15 minutes or less.

NSN Information for Part Number 1280PALC22V10-2 with NSN 5962-01-371-1421, 5962013711421

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-371-1421 Item Description: Microcircuit Memory	5962	013711421	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1280palc22v10-2	5	2	3

Characteristics Data of NSN 5962-01-371-1421, 5962013711421

MRC	Criteria	Characteristic
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQZP	INPUT CIRCUIT PATTERN22 INPUT
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS
MEMORY	ZZZX	DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDCOMPATIBLE CMOS AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT
MEMORY	ZZZP	PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-2
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON
MEMORY	CZES	HYBRID TECHNOLOGY TYPEMONOLITHIC
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MEMORY	ZZZK	SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD