| Mfg Part Number: AT27C512R-20LM 883 | Alternate P/N: AT27C512R20LM883 | NSN : 5962-01-333-2528 |
| NIIN : 013332528 | CAGE Code : 34335 | Manufacturer: Advanced Micro Devices Inc |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for choosing NSN Catalogue for all your operational needs. You have reached our NSN RFQ Page which features our in-demand NSN 5962-01-333-2528 part AT27C512R-20LM 883 with Microcircuit Memory manufactured by MFG Advanced Micro Devices Inc. Some of these items include part number AT27C512R-20LM 883, and various others, all of which have been subjected to a number of quality assurance measures, tests, verifications, and assessments. At NSN Catalogue, we make it our priority to only source from top global manufacturers that we trust, assuaging the worry of receiving quality items from us.
The NSN 5962-01-333-2528 products AT27C512R-20LM 883 that we feature by MFG Advanced Micro Devices Inc are paired alongside CAGE Code 34335. NSN Catalogue utilizes CAGE Codes, allowing our customers to narrow down our vast listings by using our optimized search engine and filters. If you are familiar with the CAGE Codes associated with the particular NSN parts and components you wish to purchase, we invite you to use them. If you have more information regarding the NSN items you wish to purchase, please provide such details in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in just 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-333-2528 Item Description: Microcircuit Memory | 5962 | 013332528 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| At27c512r-20lm 883 | 1 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.442 INCHES MINIMUM AND 0.458 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 350.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-12 MIL-M-38510 |
| ADAQ | BODY LENGTH | 0.540 INCHES MINIMUM AND 0.560 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.060 INCHES MINIMUM AND 0.120 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | EPROM |
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